IRF1404
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance ย
Min. Typ. Max. Units
Conditions
40 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.036 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mA
โโโ 0.0035 0.004 โฆ VGS = 10V, ID = 95A ย
2.0 โโโ 4.0 V VDS = 10V, ID = 250ยตA
106 โโโ โโโ S VDS = 25V, ID = 60A
โโโ โโโ 20 ยตA VDS = 40V, VGS = 0V
โโโ โโโ 250
VDS = 32V, VGS = 0V, TJ = 150ยฐC
โโโ โโโ 200 nA VGS = 20V
โโโ โโโ -200
VGS = -20V
โโโ 160 200
โโโ 35 โโโ
โโโ 42 60
โโโ 17 โโโ
ID = 95A
nC VDS = 32V
VGS = 10Vย
VDD = 20V
โโโ 140 โโโ ns ID = 95A
โโโ 72 โโโ
RG = 2.5โฆ
โโโ 26 โโโ
RD = 0.21โฆ ย
Between lead,
D
โโโ 4.5 โโโ
6mm (0.25in.)
nH
from package
G
โโโ 7.5 โโโ
and center of die contact
S
โโโ 7360 โโโ
VGS = 0V
โโโ 1680 โโโ pF VDS = 25V
โโโ 240 โโโ
ฦ = 1.0MHz, See Fig. 5
โโโ 6630 โโโ
โโโ 1490 โโโ
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
VGS = 0V, VDS = 32V, ฦ = 1.0MHz
โโโ 1540 โโโ
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ย Starting TJ = 25ยฐC, L = 0.12mH
RG = 25โฆ, IAS = 95A. (See Figure 12)
ย ISD โค 95A, di/dt โค 150A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 162ย
A
showing the
integral reverse
G
โโโ โโโ 650
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 95A, VGS = 0V ย
โโโ 71 110 ns TJ = 25ยฐC, IF = 95A
โโโ 180 270 nC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ย Pulse width โค 300ยตs; duty cycle โค 2%.
ย
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ย Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
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