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Z0103MA View Datasheet(PDF) - ON Semiconductor

Part NameZ0103MA ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionSensitive Gate Triacs Series Silicon Bidirectional Thyristors 1A


Z0103MA Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Z0103MA, Z0107MA, Z0109MA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
di/dt(c)
1.6
Critical Rate of Rise of OffState Voltage (VD = 67% Rated VDRM,
Exponential Waveform, Gate Open, TJ = 110°C)
Z0103MA
Z0107MA
Z0109MA
dv/dt
10
30
20
60
50
75
Repetitive Critical Rate of Rise of OnState Current, TJ = 125°C
Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz
di/dt
Max Unit
A/ms
V/ms
20
A/ms
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TRIACS 1.0 AMPERE RMS 600 VOLTS

Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO−92 package which is readily adaptable for use in automatic insertion equipment.


Features
•One−Piece, Injection−Molded Package
•Blocking Voltage to 600 V
•Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives
•All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability
•Improved Noise Immunity (dv/dt Minimum of 10 V/sec at 110°C)
•Commutating di/dt of 1.6 A/msec at 110°C
•High Surge Current of 8 A
•These are Pb−Free Devices

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