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Y100N10E View Datasheet(PDF) - Motorola => Freescale

Part NameDescriptionManufacturer
Y100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM Motorola
Motorola => Freescale Motorola
Y100N10E Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
TYPICAL ELECTRICAL CHARACTERISTICS
MTY100N10E
200
VGS = 10 V
8V
9V
160
120
80
TJ = 25°C
7V
6V
120
100
VDS 10 V
80
60
40
40
5V
0
0
2
4
6
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
20
100°C
TJ = – 55°C
25°C
0
2
3
4
5
6
7
8
9 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.018
0.016
0.014
VGS = 10 V
TJ = 100°C
0.012
25°C
0.01
0.008
– 55°C
0.006
0
50
100
150
200
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.011
0.0105
TJ = 25°C
VGS = 10 V
0.01
0.0095
0.009
15 V
0.0085
0.008
0
50
100
150
200
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.8
VGS = 10 V
1.6
ID = 50 A
1.4
1.2
1
0.8
1000000
100000
VGS = 0 V
1000
100
10
TJ = 125°C
100°C
25°C
0.6
– 50 – 25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1
0
20
40
60
80
100
120
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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