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Y100N10E View Datasheet(PDF) - Motorola => Freescale

Part NameDescriptionManufacturer
Y100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM Motorola
Motorola => Freescale Motorola
Y100N10E Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MTY100N10E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
100
115
Vdc
mV/°C
IDSS
µAdc
10
200
IGSS
100
nAdc
VGS(th)
2.0
7
4
Vdc
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 50 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 100 Adc)
(ID = 50 Adc, TJ = 125°C)
Forward Transconductance (VDS = 6 Vdc, ID = 50 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 50 Vdc, ID = 100 Adc,
VGS = 10 Vdc,
RG = 9.1 )
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 100 Adc, VGS = 0 Vdc)
(IS = 100 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
0.011
Ohm
Vdc
1.0
1.2
1.0
30
49
mhos
7600 10640
pF
3300
4620
1200
2400
48
96
ns
490
980
186
372
384
768
270
378
nC
50
150
118
Vdc
1
1.2
0.9
Reverse Recovery Time
(See Figure 14)
(IS = 100 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
trr
ta
tb
QRR
LD
145
ns
90
55
2.34
µC
4.5
nH
Internal Source Inductance
LS
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
13
nH
2
Motorola TMOS Power MOSFET Transistor Device Data
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