TYN612T View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
TYN612T Datasheet PDF : 6 Pages
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TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
TYN612T
SCRs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN
V /V DRM RRM
-
IT(RMS)
RMS on-state current
180oC conduction angle Tc=105
-
ITSM
Non repetitive surge
peak on-statecurrent
Tj=25oC tp=8.3ms
-
Tj=25oC tp=10ms
-
I T ( AV )
Average on-state current 180oC conduction angle Tc=105
-
Value
600
12
-
146
140
-
UNIT
V
A
A
A
A
I2t
DI/dt
IGM
IDRM
IRRM
P G(AV)
Tstg
Tj
I2t Value for fusing
Tp=10ms
Tj=25
-
Critical rate of rise of
on-state current
IG=2x I , GT tr<=100ns F=60HZ Tj=125
-
Peak gate current
tp=20us Tj=125
-
V =V DRM
RRM
Tj=25
-
V =V DRM
RRM
Tj=125
-
Average gate
power dissipation
Tj=125
-
Storage junction
temperature range
-40
Operating junction
Temperature range
-40
98
A2S
50
A/ s
4
A
5
A
2
mA
1
W
150
125
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
Static characteristics
IGT
VGT
IL
IH
VGD
dV/dt
CONDITIONS
VD=12V; RL=33
IG=1.2IGT
IT=500mA Gate open
VD=VDRM RL=3.3K Tj=125
VD=67%VDRM Gateopen;TJ=125
MIN TYP MAX UNIT
0.5 -
-
-
-
-
0.2
-
40
-
5
mA
1.3
V
30
mA
15
mA
-
V
-
V/us
Dynamic Characteristics
VTM
lTM=24A tp=380 s
Vto
Threshold voltage
Rd
Dynamic resistance
TJ=25
TJ=125
TJ=125
-
-
1.6
V
-
-
0.85
V
30
m
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