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U630H64BDC25G1 查看數據表(PDF) - Zentrum Mikroelektronik Dresden AG

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U630H64BDC25G1 HardStore 8K x 8 nvSRAM Zentrum
Zentrum Mikroelektronik Dresden AG Zentrum
U630H64BDC25G1 Datasheet PDF : 14 Pages
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U630H64
Write Cycle #1: W-controlledj
Ai
E
W
DQi
Input
DQi
Output
tcW (12)
Address Valid
tsu(E) (17)
th(A) (21)
tsu(A)
(15)
tsu(A-WH) (16)
tw(W) (13)
tsu(D) (19)
th(D) (20)
tdis(W)
Previous Data Valid
Input Data Valid
(22)
ten(W) (23)
High Impedance
Write Cycle #2: E-controlledj
Ai
E
W
DQi
Input
DQi
Output
tsu(A) (15)
tcW (12)
Address Valid
tw(E) (18)
th(A) (21)
tsu(W) (14)
tsu(D) (19)
th(D) (20)
Input Data Valid
High Impedance
undefined
L- to H-level
H- to L-level
i: If W is LOW and when E goes LOW, the outputs remain in the high impedance state.
j: E or W and NE must be > VIH during address transitions.
6
April 7, 2005
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