Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

U630H64BDC35G1 查看數據表(PDF) - Zentrum Mikroelektronik Dresden AG

零件编号产品描述 (功能)生产厂家
U630H64BDC35G1 HardStore 8K x 8 nvSRAM Zentrum
Zentrum Mikroelektronik Dresden AG Zentrum
U630H64BDC35G1 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
U630H64
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
VOH
VOL
IOH
IOL
IIH
IIL
IOHZ
IOLZ
VCC
IOH
IOL
VCC
VOH
VOL
VCC
VIH
VIL
VCC
VOH
VOL
= 4.5 V
=-4 mA
= 8 mA
= 4.5 V
= 2.4 V
= 0.4 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 0V
C-Type
K-Type
Unit
Min. Max. Min. Max.
2.4
2.4
V
0.4
0.4 V
-4
-4 mA
8
8
mA
1
1 µA
-1
-1
µA
1
1 µA
-1
-1
µA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
1 Read Cycle Timef
2 Address Access Time to Data Validg
3 Chip Enable Access Time to Data Valid
4 Output Enable Access Time to Data Valid
5 E HIGH to Output in High-Zh
6 G HIGH to Output in High-Zh
7 E LOW to Output in Low-Z
8 G LOW to Output in Low-Z
9 Output Hold Time after Addr. Changeg
10 Chip Enable to Power Activee
11 Chip Disable to Power Standbyd, e
Symbol
Alt.
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tELQX
tGLQX
tAXQX
tELICCH
tEHICCL
IEC
tcR
ta(A)
ta(E)
ta(G)
tdis(E)
tdis(G)
ten(E)
ten(G)
tv(A)
tPU
tPD
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both LOW.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
25
35
45
Unit
Min. Max. Min. Max. Min. Max.
25
35
45
ns
25
35
45 ns
25
35
45 ns
12
20
25 ns
13
17
20 ns
13
17
20 ns
5
5
5
ns
0
0
0
ns
3
3
3
ns
0
0
0
ns
25
35
45 ns
4
April 7, 2005
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]