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U630H64BDC35G1 查看數據表(PDF) - Zentrum Mikroelektronik Dresden AG

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U630H64BDC35G1 HardStore 8K x 8 nvSRAM Zentrum
Zentrum Mikroelektronik Dresden AG Zentrum
U630H64BDC35G1 Datasheet PDF : 14 Pages
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Operating Conditions
Power Supply Voltage
Input Low Voltage
Input High Voltage
U630H64
Symbol
Conditions
VCC
VIL
-2 V at Pulse Width
10 ns permitted
VIH
Min.
4.5
-0.3
2.2
Max.
5.5
0.8
VCC+0.3
Unit
V
V
V
DC Characteristics
Operating Supply Currentb
Average Supply Current during
STOREc
Standby Supply Currentd
(Cycling TTL Input Levels)
Average Supply Current
at tcR = 200 nsb
(Cycling CMOS Input Levels)
Standby Supply Currentd
(Stable CMOS Input Levels)
Symbol
Conditions
C-Type
K-Type
Unit
Min. Max. Min. Max.
ICC1
VCC
VIL
VIH
= 5.5 V
= 0.8 V
= 2.2 V
tc
= 25 ns
90
tc
= 35 ns
80
tc
= 45 ns
75
ICC2
VCC
= 5.5 V
6
E
VCC-0.2 V
W
VCC-0.2 V
VIL
0.2 V
VIH
VCC-0.2 V
ICC(SB)1
VCC
E
= 5.5 V
VIH
95 mA
85 mA
80 mA
7 mA
tc
= 25 ns
30
tc
= 35 ns
23
tc
= 45 ns
20
ICC3
VCC
= 5.5 V
15
W
VCC-0.2 V
VIL
0.2 V
VIH
VCC-0.2 V
ICC(SB)
VCC
= 5.5 V
1
E
VCC-0.2 V
VIL
0.2 V
VIH
VCC-0.2 V
34 mA
27 mA
23 mA
15 mA
1 mA
b: ICC1 and ICC3 are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.
The current ICC1 is measured for WRITE/READ - ratio of 1/2.
c: ICC2 is the average current required for the duration of the STORE cycle (STORE Cycle Time).
d: Bringing E VIH will not produce standby current levels until any nonvolatile cycle in progress has timed out. See MODE SELECTION
table. The current ICC(SB)1 is measured for WRITE/READ - ratio of 1/2.
April 7, 2005
3
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