DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

TC1014-2.7VCT713 View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
TC1014-2.7VCT713 Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 5.0V LDO With Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 390μS
Measure Rise Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 192μS
VSHDN
VSHDN
VOUT
VOUT
FIGURE 2-21:
Measure Rise Time of 5.0V
with Bypass Capacitor.
Measure Fall Time of 5.0V LDO With Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA
VIN = 6V, Temp = 25°C, Fall Time = 167μS
VSHDN
FIGURE 2-23:
Measure Rise Time of 5.0V
without Bypass Capacitor.
Measure Fall Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Fall Time = 88μS
VSHDN
VOUT
VOUT
FIGURE 2-22:
Measure Fall Time of 5.0V
with Bypass Capacitor.
FIGURE 2-24:
Measure Fall Time of 5.0V
without Bypass Capacitor.
DS21335E-page 8
© 2007 Microchip Technology Inc.
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]