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TC1014-5.0VCT View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
TC1014-5.0VCT Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 448μS
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 184μS
VSHDN
VSHDN
VOUT
VOUT
FIGURE 2-17:
Measure Rise Time of 3.3V
with Bypass Capacitor.
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA
VIN = 4.3V, Temp = 25°C, Fall Time = 100μS
VSHDN
FIGURE 2-19:
Measure Rise Time of 3.3V
without Bypass Capacitor.
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Fall Time = 52μS
VSHDN
VOUT
VOUT
FIGURE 2-18:
Measure Fall Time of 3.3V
with Bypass Capacitor.
FIGURE 2-20:
Measure Fall Time of 3.3V
without Bypass Capacitor.
© 2007 Microchip Technology Inc.
DS21335E-page 7
 

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