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TC1015-2.7VCT View Datasheet(PDF) - Microchip Technology

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TC1015-2.7VCT Datasheet PDF : 22 Pages
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TC1014/TC1015/TC1185
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Symbol
Min
Typ
Max
Units
Device
Test Conditions
Input Operating Voltage
VIN
2.7
6.0
V
Note 1
Maximum Output Current
IOUTMAX
50
mA TC1014
100
TC1015
150
TC1185
Output Voltage
VOUT
VR – 2.5% VR ±0.5% VR + 2.5%
V
Note 2
VOUT Temperature Coefficient TCVOUT
20
ppm/°C
40
Note 3
Line Regulation
Load Regulation
ΔVOUT/
ΔVIN
ΔVOUT/
VOUT
0.05
0.5
0.5
0c.35
2
3
%
(VR + 1V) VIN 6V
% TC1014; TC1015 IL = 0.1 mA to IOUTMAX
TC1185
IL = 0.1 mA to IOUTMAX
(Note 4)
Dropout Voltage
Supply Current (Note 8)
Shutdown Supply Current
Power Supply Rejection
Ratio
VIN-VOUT
IIN
IINSD
PSRR
2
mV
IL = 100 µA
65
IL = 20 mA
85
120
IL = 50 mA
180
250
TC1015; TC1185 IL = 100 mA
270
400
TC1185
IL = 150 mA (Note 5)
50
80
µA
SHDN = VIH, IL = 0
0.05
0.5
µA
SHDN = 0V
64
dB
FRE 1 kHz
Output Short Circuit Current
IOUTSC
Thermal Regulation
ΔVOUT/
ΔPD
Thermal Shutdown Die
Temperature
TSD
300
450
mA
0.04
V/W
160
°C
VOUT = 0V
Notes 6, 7
Thermal Shutdown
Hysteresis
ΔTSD
10
°C
Note 1:
2:
3:
The minimum VIN has to meet two conditions: VIN 2.7V and VIN VR + VDROPOUT.
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x ΔT
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
DS21335E-page 2
© 2007 Microchip Technology Inc.
 

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