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STD5N95K3 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD5N95K3 Datasheet PDF : 23 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK TO-220FP TO-220 IPAK
VGS Gate- source voltage
ID
Drain current (continuous) at TC = 25 °C
4
ID
Drain current (continuous) at TC = 100 °C
3
IDM (2) Drain current (pulsed)
16
PTOT Total dissipation at TC = 25 °C
90
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
EAS
dv/dt(3)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s,TC = 25 °C)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD 4 A, di/dt 100 A/µs, peak VDS V(BR)DSS
±30
4(1)
4
3(1)
3
16(1)
16
25
90
4
100
5
2500
-55 to 150
V
A
A
A
W
A
mJ
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK TO-220FP TO-220 IPAK
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
1.39
50
5
62.5
1.39
°C/W
100 °C/W
°C/W
DocID15696 Rev 3
3/23
 

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