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ST93C06M6013TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
ST93C06M6013TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ST93C06M6013TR Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ST93C06, ST93C06C
Figure 2A. DIP Pin Connections
Figure 2B. SO Pin Connections
ST93C06
ST93C06C
S1
C2
8 VCC
7 DU
D3
6 ORG
Q4
5 VSS
AI00817B
ST93C06
ST93C06C
S1
C2
8 VCC
7 DU
D3
6 ORG
Q4
5 VSS
AI00818C
Warning: DU = Don’t Use
Warning: DU = Don’t Use
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
–40 to 125
°C
TSTG Storage Temperature
–65 to 150
°C
TLEAD Lead Temperature, Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
215
260
°C
VIO
Input or Output Voltages (Q = VOH or Hi-Z)
–0.3 to VCC +0.5
V
VCC
Supply Voltage
–0.3 to 6.5
V
VESD
Electrostatic Discharge Voltage (Human Body model) (2)
Electrostatic Discharge Voltage (Machine model) (3)
ST93C06
ST93C06C
ST93C06
ST93C06C
2000
4000
V
500
500
V
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500 ).
3. EIAJ IC-121 (Condition C) (200pF, 0 ).
DESCRIPTION (cont’d)
The data contained at this address is then clocked
out serially. The address pointer is automatically
incremented after the data is output and, if the Chip
Select input (S) is held High, the ST93C06 can
output a sequential stream of data bytes/words. In
this way, the memory can be read as a data stream
from 8 to 256 bits long, or continuously as the
address counter automatically rolls over to ’00’
when the highest address is reached. Program-
ming is internally self-timed (the external clock
signal on C input may be disconnected or left
running after the start of a Write cycle) and does
not require an erase cycle prior to the Write instruc-
tion. The Write instruction writes 8 or 16 bits at one
time into one of the 32 bytes or 16 words. After the
start of the programming cycle aBusy/Ready signal
is available on the Data output (Q) when Chip
Select (S) is driven High.
The design of the ST93C06 and the High Endur-
ance CMOS technologyused for its fabrication give
an Erase/Write cycle Endurance of 1,000,000 cy-
cles and a data retention of 40 years.
2/15
 

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