ST93C06CB3013TR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ST93C06CB3013TR Datasheet PDF : 15 Pages
| |||
ST93C06
ST93C06C
256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
DUAL ORGANIZATION: 16 x 16 or 32 x 8
BYTE/WORD and ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE 5V ±10% SUPPLY VOLTAGE
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ENHANCED ESD/LATCH UP
PERFORMANCES for ”C” VERSION
ST93C06 and ST93C06C are replaced by
the M93C06
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
The ST93C06 and ST93C06C are 256 bit Electri-
cally Erasable Programmable Memory (EEPROM)
fabricated with SGS-THOMSON’s High Endurance
Single Polysilicon CMOS technology. In the text the
two products are referred to as ST93C06.
The memory is divided into either 32 x 8 bit bytes
or 16 x 16 bit words. The organization may be
selected by a signal applied on the ORG input.
The memory is accessed through a serial input (D)
and by a set of instructions which includes Read a
byte/word, Write a byte/word, Erase a byte/word,
Erase All and Write All. ARead instruction loads the
address of the first byte/word to be read into an
internal address pointer.
Table 1. Signal Names
S
Chip Select Input
D
Serial Data Input
Q
Serial Data Output
C
Serial Clock
ORG
Organisation Select
VCC
Supply Voltage
VSS
Ground
D
C
S
ORG
VCC
ST93C06
ST93C06C
VSS
Q
AI00816B
June 1997
This is information on a product still in production bu t not recommended for new de signs.
1/15
|
|
Share Link: 