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SMAJ530 View Datasheet(PDF) - General Semiconductor

Part NameSMAJ530 GE
General Semiconductor GE
DescriptionSURFACE MOUNT TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
SMAJ530 Datasheet PDF : 2 Pages
1 2
MAXIMUM RATINGS AND CHARACTERISTIC CURVES SMAJ530 AND SMAJ550
FIG. 1 - PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
TA=25°C
10
FIG. 2 - PULSE DERATING CURVE
100
75
1.0
50
0.1
0.1µs
150
100
50
1.0µs
10µs
100µs
td, PULSE WIDTH, sec.
1.0ms
10ms
FIG. 3 - PULSE WAVEFORM
tr=10µsec.
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS
to 50% of IPPM
PEAK VALUE
IPPM
HALF VALUE - IPPM
2
10/1000µsec. WAVEFORM
as DEFINED by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t, TIME, ms
25
0
0 25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE, °C
10,000
1,000
APPLICATION NOTES
RECOMMENDED PAD LAYOUT
The pad dimensions should be 0.010” (2.5mm) longer than the
contact size in the lead axis. This allows a solder fillet to form, see
figure below. Contact factory for soldering methods.
MODIFIED J-BEND
0.060 MIN
(1.52 MIN)
0.094 MAX
(2.38 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
(5.58)
Dimensions in inches and (millimeters)
Respect Thermal Resistance (PCB Layout) - as the temperature coefficient also
contributes to the clamping voltage.
Select minimum breakdown voltage, so you get acceptable power dissipation and
PCB tie point temperature. Devices with higher breakdown voltage will have a
shorter conduction time and will dissipate less power.
Clamping voltage is influenced by internal resistance - design approximation is
7V per 100mA slope.
Keep temperature of TVS lower than TOPSwitch® as a recommendation.
Maximum current is determined by the maximum TJ and can be higher than
300mA. Contact supplier for different clamping voltage / current arrangements.
Minimum breakdown voltage can be customized for other applications.
Contact supplier.
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