K06N60 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

K06N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKP06N60

SKA06N60

SKP06N60

Ic

30A

SKA06N60

20A

TC=80°C

TC=110°C

10A

Ic

0A

10Hz

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 400V,

VGE = 0/+15V, RG = 50Ω)

tp=2µs

10A

15µs

50µs

1A

200µs

0.1A

1V

SKP06N60

SKA06N60

10V

100V

1ms

DC

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C)

80W

SKP06N60

60W

40W

SKA06N60

20W

0W

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

(Tj ≤ 150°C)

SKP06N60

10A

SKA06N60

5A

0A

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

4

Rev. 2.3 Sep 07

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