K06N60 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
K06N60
Infineon Technologies
| K06N60 Datasheet PDF : 0 Pages | |||
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=6A,
VGE=0/15V,
R G =50Ω ,
Lσ1) =180nH,
Cσ1) =250pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=200V, IF=6A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
SKP06N60
SKA06N60
Value
typ.
Unit
max.
25
18
220
54
0.110
0.105
0.215
30 ns
22
264
65
0.127 mJ
0.137
0.263
200
- ns
17
-
183
-
200
- nC
2.8
-A
180
- A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=400V,IC=6A,
VGE=0/15V,
RG=50Ω,
Lσ1)=180nH,
Cσ1)=250pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=200V, IF=6A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
24
17
248
70
0.167
0.153
0.320
29 ns
20
298
84
0.192 mJ
0.199
0.391
290
- ns
27
-
263
-
500
- nC
5.0
-A
200
- A/µs
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
3
Rev. 2.3 Sep 07
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