K02N120 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
K02N120
Infineon Technologies
| K02N120 Datasheet PDF : 0 Pages | |||
SKP02N120
SKB02N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
Conditions
RthJC
RthJCD
RthJA
RthJA
TO-220AB
TO-263AB(D2PAK)
Max. Value
Unit
2.0
K/W
4.5
62
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=100µA
VGE = 15V, IC=2A
Tj=25°C
Tj=150°C
VGE=0V, IF=2A
Tj=25°C
Tj=150°C
IC=100µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=2A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=2A
VGE=15V
TO-220AB
VGE=15V,tSC≤10µs
100V≤VCC≤1200V,
Tj ≤ 150°C
min.
1200
2.5
-
-
3
-
-
-
-
-
-
-
-
-
Value
Unit
typ. max.
-
-V
3.1
3.6
3.7
4.3
2.0
2.5
1.75
4
5
µA
-
25
-
100
-
100 nA
1.5
-S
205
250 pF
28
34
12
15
11
- nC
7
- nH
24
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Jul-02
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