K02N120(2013) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

K02N120
(Rev.:2013)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

SKP02N120

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

Symbol

RthJC

RthJCD

RthJA

Conditions

Max. Value

Unit

2.0

K/W

4.5

62

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

V(BR)CES

VCE(sat)

VGE=0V, IC=100A

VGE = 15V, IC=2A

Tj=25C

Diode forward voltage

Gate-emitter threshold voltage

VF

VGE(th)

Tj=150C

VGE=0V, IF=2A

Tj=25C

Tj=150C

IC=100A,VCE=VGE

Zero gate voltage collector current ICE S

VCE=1200V,VGE=0V

Tj=25C

Gate-emitter leakage current

Transconductance

Dynamic Characteristic

IGES

gfs

Tj=150C

VCE=0V,VGE=20V

VCE=20V, IC=2A

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

Ciss

Coss

Crss

QGate

Internal emitter inductance

measured 5mm (0.197 in.) from case

Short circuit collector current2)

LE

IC(SC)

VCE=25V,

VGE=0V,

f=1MHz

VCC=960V, IC=2A

VGE=15V

VGE=15V,tSC10s

100VVCC1200V,

Tj  150C

min.

1200

2.5

-

-

3

-

-

-

-

-

-

-

-

-

Value

Unit

typ. max.

-

-V

3.1

3.6

3.7

4.3

2.0

2.5

1.75

4

5

A

-

25

-

100

-

100 nA

1.5

-S

205

250 pF

28

34

12

15

11

- nC

7

- nH

24

-A

2) Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

2

Rev. 2.3 12.06.2013

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