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K02N120(2013) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
K02N120 Datasheet PDF : 0 Pages
SKP02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
Allowed number of short circuits: <1000; time between
short circuits: >1s.
40lower Eoff compared to previous generation
Short circuit withstand time – 10 s
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-220-3-1
(TO-220AB)
Type
SKP02N120
VCE
IC
Eoff
Tj
Marking
Package
1200V 2A 0.11mJ 150C K02N120 PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, 100VVCC1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
Unit
1200
V
A
6.2
2.8
9.6
9.6
4.5
2
9
20
V
10
s
62
W
-55...+150
C
260
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.3 12.06.2013
 

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