PZT2907A View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PZT2907A Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistor
Product specification
PZT2907A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
106
K/W
25
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
Ce
fT
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
CONDITIONS
IE = 0; VCB = −50 V
IE = 0; VCB = −50 V; Tamb = 150 °C
IC = 0; VEB = −5 V
IC = −0.1 mA; VCE = −10 V
IC = −1 mA; VCE = −10 V
IC = −10 mA; VCE = −10 V
IC = −150 mA; VCE = −10 V; note 1
IC = −500 mA; VCE = −10 V; note 1
IC = −150 mA; IB = −15 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
IC = −150 mA; IB = −15 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −2 V; f = 1 MHz
IC = −50 mA; VCE = −20 V;
f = 100 MHz; note 1
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MIN.
−
−
−
75
100
100
100
50
−
−
−
−
−
−
200
MAX.
−10
−10
−50
−
−
−
300
−
−400
−1.6
−1.3
−2.6
8
30
−
UNIT
nA
µA
nA
mV
V
V
V
pF
pF
MHz
−
40
ns
−
12
ns
−
30
ns
−
365
ns
−
300
ns
−
65
ns
1999 Apr 14
3
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