Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site


PZT2222AT1D View Datasheet(PDF) - ON Semiconductor

Part NamePZT2222AT1D ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionNPN Silicon Planar Epitaxial Transistor
PZT2222AT1D Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ON Semiconductort
NPN Silicon Planar
Epitaxial Transistor
PZT2222AT1
ON Semiconductor Preferred Device
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
PNP Complement is PZT2907AT1
The SOT-223 package can be soldered using wave or reflow.
SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
Available in 12 mm tape and reel
BASE
Use PZT2222AT1 to order the 7 inch/1000 unit reel. 1
Use PZT2222AT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
COLLECTOR
2, 4
3
EMITTER
SOT-223 PACKAGE
NPN SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (Open Collector)
Collector Current
Total Power Dissipation up to TA = 25°C(1)
Storage Temperature Range°
Junction Temperature°
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
40
75
6.0
600
1.5
– 65 to +150
150
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
Thermal Resistance from Junction to Ambient
Lead Temperature for Soldering, 0.0625from case
Time in Solder Bath
RθJA
TL
83.3
260
10
°C/W
°C
Sec
DEVICE MARKING
P1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc
Collector-Base Breakdown Voltage (IC = 10 µAdc, IE = 0)
V(BR)CBO
°75°
°°
Vdc
Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
V(BR)EBO
6.0
Vdc
Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc)
IBEX
20
nAdc
Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc)
ICEX
10
nAdc
Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
IEBO
100
nAdc
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 3
Publication Order Number:
PZT2222AT1/D
Direct download click here
 
Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2018  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]