PZT2222A View Datasheet(PDF) - Diotec Semiconductor Germany

Part Name

Description

Manufacturer

PZT2222A

NPN Suface Mount Si-Epitaxial Planar Switching Transistors

Diotec Semiconductor Germany  

PZT2222 / PZT2222A

Characteristics (Tj = 25°C)

Base saturation voltage – Basis-Sättigungsspannung 2)

IC = 150 mA, IB = 15 mA

PZT2222

PZT2222A

IC = 500 mA, IB = 50 mA

PZT2222

PZT2222A

DC current gain – Kollektor-Basis-Stromverhältnis

IC = 0.1 mA,

IC = 1 mA,

IC = 10 mA,

IC = 150 mA,

VCE = 10 V

VCE = 10 V

VCE = 10 V

VCE = 10 V 2)

IC = 500 mA, VCE = 10 V 2)

PZT2222

PZT2222A

Gain-Bandwidth Product – Transitfrequenz

IC = 20 mA, VCE = 20 V, f = 100 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Switching times – Schaltzeiten

delay time

rise time

storage time

fall time

ICon = 150 mA

IBon = 15 mA

- IBoff = 15 mA

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Thermal resistance junction to soldering point

Wärmewiderstand Sperrschicht – Lötpad

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

VBEsat

VBEsat

VBEsat

VBEsat

hFE

hFE

hFE

hFE

hFE

hFE

fT

CCBO

CEBO

td

tr

ts

tf

RthA

RthS

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

–

1.3 V

–

–

1.2 V

–

–

2.6 V

–

–

2.0 V

35

–

–

50

–

–

75

–

–

100

–

300

30

–

–

40

–

–

200 MHz

–

–

–

–

8 pF

–

–

30 pf

–

–

10 ns

–

–

25 ns

–

–

225 ns

–

–

60 ns

< 93 K/W 1)

< 27 K/W

PZT2907, PZT2907A

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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© Diotec Semiconductor AG

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