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PZT2222A View Datasheet(PDF) - Diotec Semiconductor Germany

Part Name
Description
Manufacturer
PZT2222A
Diotec
Diotec Semiconductor Germany  Diotec
PZT2222A Datasheet PDF : 2 Pages
1 2
PZT2222 / PZT2222A
PZT2222 / PZT2222A
NPN
Suface Mount Si-Epitaxial Planar Switching Transistors
Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage
Version 2006-05-09
6.5±0.2
3±0.1
4
1.65
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
Type
Code
1 0.7
2.3
2
3
3.25
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
1.3 W
SOT-223
0.04 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open VCEO
Collector-Base-volt. - Kollektor-Basis-Spannung
B open
VCBO
Emitter-Base-voltage - Emitter-Basis-Spannung
C open
VEBO
Power dissipation – Verlustleistung
Ptot
Collector current – Kollektorstrom (dc)
IC
Junction temperature – Sperrschichttemperatur
Tj
Storage temperature – Lagerungstemperatur
TS
Grenzwerte (TA = 25°C)
PZT2222
PZT2222A
30 V
40 V
60 V
75 V
5V
6V
1.3 W 1)
600 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Collector-cutoff current – Kollektor-Reststrom
IE = 0, VCB = 50 V
PZT2222
PZT2222A
IE = 0, VCB = 50 V, Tj = 150°C
PZT2222
PZT2222A
Emitter-cutoff current – Emitter-Reststrom
IC = 0, VEB = 3 V
Collector saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
PZT2222
PZT2222A
IC = 500 mA, IB = 50 mA
PZT2222
PZT2222A
ICBO
ICBO
ICBO
ICBO
IEBO
VCEsat
VCEsat
VCEsat
VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
20 nA
10 nA
20 µA
10 µA
–-
10 nA
0.4 V
0.3 V
1.6 V
1.0 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
 

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