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STP14NF12FP View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP14NF12FP Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
2
Electrical characteristics
STP14NF12 - STP14NF12FP
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
ID = 250µA, VGS =0
120
VDS = max ratings
VDS = max ratings,
TC = 125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
2
VGS = 10V, ID = 7A
Typ. Max. Unit
V
1
µA
10
µA
±100 nA
3
4
V
0.16 0.18
Table 4.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 7A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 50V, ID = 7A
RG = 4.7VGS = 10V
(see Figure 15)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 80V, ID = 14A,
VGS = 10V
(see Figure 16)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
4
S
460
pF
70
pF
30
pF
16
ns
25
ns
32
ns
8
ns
15.5 21
nC
3.7
nC
4.7
nC
4/14
 

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