D18754EJ1V0DS00 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
| D18754EJ1V0DS00 Datasheet PDF : 0 Pages | |||
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
VGS = 10 V
ID = 80 A
4
3
2
1
0
-75
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
tr
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
100
ID - Drain Current - A
1000
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
0V
10
1
Pulsed
0.1
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP160N04TUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
12
35
VDD = 32 V
15 V
30
8V
9
25
20
6
VGS
15
10
5
0
0
VDS
50
100
3
ID = 160 A
Pulsed
0
150
200
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
1
10
100
1000
IF - Diode Forward Current - A
Data Sheet D18754EJ1V0DS
5
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