MRF421 View Datasheet(PDF) - Tyco Electronics
Part Name
Description
Manufacturer
| MRF421 Datasheet PDF : 0 Pages | |||
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for application as a high–power linear amplifier from 2.0 to
30 MHz.
• Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 100 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
• Intermodulation Distortion @ 100 W (PEP) —
IMD = –30 dB (Min)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Order this document
by MRF421/D
MRF421
100 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstand Current — 10 s
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 200 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
Symbol
VCEO
VCBO
VEBO
IC
—
PD
Tstg
Symbol
RθJC
Min
20
45
45
3.0
—
REV 1
1
CASE 211–11, STYLE 1
Value
20
45
3.0
20
30
290
1.66
–65 to +150
Max
0.6
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
10
mAdc
(continued)
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