ELECTRICAL CHARACTERISTICS
STATIC
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions VBATT = 1.2 V, VO1_SENSE = 2.4 V, VGATE= 6.0 V, fCLK = 176.4 kHz unless
otherwise noted. Typical values noted reflect the approximate parameter means at TA = 27°C under nominal conditions unless
otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
Switching Power Supply 2
VOUT2 Output Voltage (Io = 0~80 mA)
HG Output Voltage (11) (Isource = 400 µA)
(Isink = 400 µA)
LG Output Voltage (11) (Isource = 400 µA)
(Isink = 400 µA)
VOUT2
VDW2TH
VDW2TL
VDW2BH
VDW2BL
V
1.05
1.15
1.25
5.2
-
VGATE
0
-
0.3
5.2
-
VGATE
0
-
0.3
Series Pass Power Supply Circuit
SREG1 Control Voltage (Io = 5~60 mA) (12)
SREG1-Error AMP Input offset voltage (13)
SREG2 Control Voltage (Io = 6~80 mA) (12)
SREG2-Error AMP Input offset voltage (14)
SREG3 Control Voltage (Io = 5~60 mA) (12)
SREG3-Error AMP Input offset voltage (15)
SREG2G Output Voltage (16) (Isource = 2.5 µA)
(Isink = 2.5 µA)
VSREG1
SR1OFST
VSREG2
SR2OFST
VSREG3
SR3OFST
SREG2GH
SREG2GL
2.7
-13.5
2.7
-17
2.7
-11
5.0
0
2.8
2.9
V
-
24.5
mV
2.8
2.9
V
-
17
mV
2.8
2.9
V
-
23
mV
-
VGATE
V
-
0.5
V
Power Switch On Resistance
VOUT1 Circuit
VOUT2 Circuit
VGATE Power Supply Circuit
(Io = 0~6 mA) (17)
(Io = 0~6 mA) (18)
CH_PUMP Output Voltage (Isource = 2.5 mA)
(Isink = 2.5 mA)
VGH Voltage (Certified value)
RVOUT1
RVOUT2
-
0.4
-
0.4
VGATE_00
5.5
6.0
VGATE_10
4.6
5.0
VO1_SENSE1LH
VB x 0.85
-
VO1_SENSE_1LL
0
-
VGH
-
-
W
0.6
0.6
V
6.5
5.4
VB
0.4
10.5
V_STDBY Output Voltage for Li_ion (Io = 300 µA) (19)
VLVB
1.75
-
2.45
V
Notes
11. Connect a transistor with gate capacity of 200 pF or smaller to HG and LG
12. If a capacitor with capacitance of 22 µF is connected to SREGO, use a phase compensation capacitor between SREGO and SREGC
when the load is 5 mA (6 mA for SREG2) or lower. The output voltage values shown in the table assume that external resistance is
connected as follows:
SREGI1 = 3.0 V to 3.3 V, 65.14KΩ between SREGO1 and SREGC1, 34.86KΩ between SREGC1 and GND.
SREGI2 = 3.0 V to 3.3 V, 54.46KΩ between SREGO2 and SREGC2, 45.54KΩ between SREGC2 and GND.
SREGI3 = 3.0 V to 3.3 V, 73.84KΩ between SREGO3 and SREGC3, 26.16KΩ between SREGC3 and GND.
13. Calculated by the right formula for input offset: SR1OFST = (Vref x 0.77) - (SREGO1 ÷ (100k ÷ 34.86k))
14. Calculated by the right formula for input offset: SR2OFST = (Vref x 1) - (SREGO1 ÷ (100k ÷ 45.54k))
15. Calculated by the right formula for input offset: SR3OFST = (Vref x 0.58) - (SREGO1 ÷ (100k ÷ 26.16k))
16. Connect a transistor with gate capacity of 300 pF or smaller to REG2G.
17. When VGATESEL1 is Low and VGATESEL2 is Low, I/O = 3 mA or higher is certified by specification.
18. When VGATESEL1 is High and VGATESEL2 is Low, I/O = 3 mA or higher is certified by specification.
19. When HVB is 4.2 V and the load from V_STDBY is 0.5 µA or higher.
18730
8
Analog Integrated Circuit Device Data
Freescale Semiconductor