MMBD301LT3G View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MMBD301LT3G

Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes

ON Semiconductor 

MBD301, MMBD301LT1

TYPICAL ELECTRICAL CHARACTERISTICS

2.8

f = 1.0 MHz

2.4

2.0

1.6

1.2

0.8

0.4

0

0 3.0 6.0 9.0 12 15 18 21 24 27 30

VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Total Capacitance

500

400

KRAKAUER METHOD

300

200

100

0

0 10 20 30 40 50 60 70 80 90 100

IF, FORWARD CURRENT (mA)

Figure 2. Minority Carrier Lifetime

10

1.0

0.1

0.01

0.001

0

TA = 100°C

75°C

25°C

6.0

12

18

24

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Reverse Leakage

100

10

TA = 85°C

TA = −40°C

1.0

TA = 25°C

0.1

30

0.2

0.4

0.6

0.8

1.0

1.2

VF, FORWARD VOLTAGE (VOLTS)

Figure 4. Forward Voltage

SINUSOIDAL

GENERATOR

IF(PEAK)

CAPACITIVE

CONDUCTION

IR(PEAK)

FORWARD

CONDUCTION

STORAGE

CONDUCTION

BALLAST

NETWORK

(PADS)

PADS

DUT

Figure 5. Krakauer Method of Measuring Lifetime

SAMPLING

OSCILLOSCOPE

(50 W INPUT)

http://onsemi.com

3

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