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MJ2955 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
MJ2955
Iscsemi
Inchange Semiconductor Iscsemi
MJ2955 Datasheet PDF : 3 Pages
1 2 3
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE=20-70@IC= -4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A
·Complement to Type 2N3055
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCER
Collector-Emitter Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-15
A
IBB
Base Current
Collector Power Dissipation
PC
@TC=25
TJ
Junction Temperature
Tstg
Storage Temperature
-7
A
115
W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.52
UNIT
/W
isc Product Specification
MJ2955
isc Websitewww.iscsemi.cn
 

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