MJ1000 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
MJ1000 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ1000
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0
60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 12mA
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 40mA
VBE(on) Base-Emitter On Voltage
ICER
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 3A, VCE= 3V
VCE= 60V; RBE=1kΩ
VCE= 60V; RBE=1kΩ; TC=150℃
VCE= 30V; IB=B 0
2.0
V
4.0
V
2.5
V
1.0
5.0
mA
0.5 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.0 mA
hFE-1
DC Current Gain
IC= 3A, VCE= 3V
1000
hFE-2
DC Current Gain
IC= 4A, VCE= 3V
750
isc Website：www.iscsemi.cn
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