1N6296A View Datasheet(PDF) - General Semiconductor
Part Name
Description
Manufacturer
1N6296A Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERISTICS at (TA=25 C unless otherwise noted) TABLE 1 (Cont’d)
JEDEC
TYPE
NUMBER
1N6291A
1N6292
1N6292A
1N6293
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
General
Semiconductor
PART
NUMBER
1.5KE68A
1.5KE75
1.5KE75A
1.5KE82
1.5KE82A
1.5KE91
1.5KE91A
1.5KE100
1.5KE100A
1.5KE110
1.5KE 110A
1.5KE120
1.5KE120A
1.5KE130
1.5KE130A
1.5KE150
1.5KE150A
1.5KE160
1.5KE160A
1.5KE170
1.5KE170A
1.5KE180
1.5KE180A
1.5KE200
1.5KE200A*
1.5KE220
1.5KE220A*
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
Breakdown Voltage
V(BR)
(Volts)
(NOTE 1)
Min
Max
64.6
71.4
67.5
82.5
71.3
78.8
73.8
90.2
77.9
86.1
81.9
100.0
86.5
95.5
90.0
110
95.0
105
99.0
121
105
116
108
132
114
126
117
143
124
137
136
165
143
158
144
176
152
168
153
187
162
179
162
198
171
189
180
220
190
210
198
242
209
231
225
275
237
263
270
330
285
315
315
385
333
368
360
440
380
420
396
484
418
462
Test
Current
at
(mA) IT
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
VWM
(Volts)
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
Maximum
Reverse
Leakage
at VWM
ID (NOTE 4) (µA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Peak Pulse
Current IPPM
(NOTE 2)
Amps
16.3
13.9
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
Maximum
Clamping
Voltage at IPPM
Vc
(Volts)
92.0
109
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
Maximum
Temperature
Coefficient of V(BR)
(% / °C)
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
NOTES:
(1) V(BR) measured after IT applied for 300µs, IT=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bidirectional types with VR 10 volts and less the ID limit is doubled
* Bidirectional versions are UL approved under component across the line protection, ULV1414 file number E108274
(1.5KE200CA, 1.5KE220CA)
+ UL listed for Telecom applications protection, 497B, file number E136766 for both uni-directional and bi-directional devices
APPLICATION
This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components.
The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry
(ref: R.E.A. specification P.E. 60).
This Transient Voltage Suppressor diode has a pulse power rating of 1500 watts for one millisecond. The response time of TVS diode clamping action is effectively instan-
taneous (1 x 10-9 seconds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semiconductors and components.
TVS diodes can also be used in series or parallel to increase the peak power ratings.
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