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MC-4516CB647XFA View Datasheet(PDF) - Elpida Memory, Inc

Part NameDescriptionManufacturer
MC-4516CB647XFA 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Elpida
Elpida Memory, Inc Elpida
MC-4516CB647XFA Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MC-4516CB647XFA
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on power supply pin relative to GND
Voltage on input pin relative to GND
Short circuit output current
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCC
VT
IO
PD
TA
Tstg
Condition
Rating
Unit
–0.5 to +4.6
V
–0.5 to +4.6
V
50
mA
8
W
0 to 70
°C
–55 to +125
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
VCC
VIH
VIL
TA
Condition
MIN.
3.0
2.0
0.3
0
TYP.
MAX.
Unit
3.3
3.6
V
VCC + 0.3
V
+0.8
V
70
°C
Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Input capacitance
Data input/output capacitance
Symbol
Test condition
CI1 A0 - A11, BA0(A13), BA1(A12), /RAS,
/CAS, /WE
CI2 CLK0, CLK2
CI3 CKE0
CI4 /CS0, /CS2
CI5 DQMB0 - DQMB7
CI/O DQ0 - DQ63
MIN.
TYP.
MAX.
Unit
24
62
pF
20
40
28
52
15
29
3
13
4
13
pF
Data Sheet E0232N20 (Ver. 2.0)
5
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