MITSUBISHI LSIs
M6MGB/T160S4BVP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
(4)TIMING DIAGRAMS
Read cycle
A0~17
(Word Mode)
A-1~17
(Byte Mode)
tCR
ta(A)
tv (A)
S-CE
OE#
WE# = "H" level
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
(Note3)
(Note3)
ta(CE)
ta (OE)
ten (OE)
ten (CE)
tdis (CE)
tdis (OE)
VALID DATA
(Note3)
(Note3)
Write cycle ( WE# control mode )
A0~17
(Word Mode)
A-1~17
(Byte Mode)
tCW
tsu (CE)
S-CE
OE#
WE#
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
(Note3)
tsu (A-WH)
tsu (A)
tdis(OE)
tw (W)
tdis (W)
DATA IN
STABLE
tsu (D) th (D)
trec (W)
ten(OE)
ten (W)
(Note3)
28
Sep. 1999 , Rev.2.0