M45PE10-VMN6TP View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

Manufacturer

M45PE10-VMN6TP

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Numonyx -> Micron 

Description

1

Description

M45PE10

The M45PE10 is a 1-Mbit (128 Kbit x 8 bit) serial paged flash memory accessed by a high

speed SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time, using the page write or

page program instruction. The page write instruction consists of an integrated page erase

cycle followed by a page program cycle.

The memory is organized as 2 sectors, each containing 256 pages. Each page is 256 bytes

wide. Thus, the whole memory can be viewed as consisting of 512 pages, or 131,072 bytes.

The memory can be erased a page at a time, using the page erase instruction, or a sector at

a time, using the sector erase instruction.

Important note

This datasheet details the functionality of the M45PE10 devices, based on the previous T7X

process or based on the current T9HX process (available since August 2007). Delivery of

parts operating with a maximum clock rate of 75 MHz starts from week 8 of 2008.

Figure 1. Logic diagram

VCC

D

C

S

W

Reset

Q

M45PE10

6/47

VSS

AI07403

Figure 2. SO and VDFPN connections

M45PE10

D1

C2

Reset 3

S4

8Q

7 VSS

6 VCC

5W

AI07404

1. There is an exposed central pad on the underside of the VFQFPN package. This is pulled, internally, to

VSS, and must not be allowed to be connected to any other voltage or signal line on the PCB.

2. See Package mechanical section for package dimensions, and how to identify pin-1.

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