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M13S64164A-6TIG View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.

Part Name
Description
Manufacturer
M13S64164A-6TIG
ESMT
[Elite Semiconductor Memory Technology Inc. ESMT
M13S64164A-6TIG Datasheet PDF : 49 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ESMT
DC Specifications
M13S64164A
Operation Temperature Condition -40°C~85°C
Parameter
Symbol
Test Condition
Operation Current
(One Bank Active)
IDD0
Operation Current
(One Bank Active)
IDD1
Precharge Power-down Standby
Current
IDD2P
tRC = tRC (min) tCK = tCK (min)
Active – Precharge
Burst Length = 2 tRC = tRC (min), CL=
2.5 IOUT = 0mA, Active-Read-
Precharge
CKE VIL(max), tCK = tCK (min), All
banks idle
Idle Standby Current
IDD2N CKE VIH(min), CS VIH(min), tCK =
tCK (min)
Active Power-down
Current
Standby IDD3P
All banks ACT, CKE VIL(max), tCK =
tCK (min)
Active Standby Current
IDD3N
One bank; Active-Precharge, tRC =
tRAS(max), tCK = tCK (min)
Operation Current (Read)
IDD4R
Burst Length = 2, CL= 2.5 , tCK = tCK
(min), IOUT = 0mA
Operation Current (Write)
IDD4W
Burst Length = 2, CL= 2.5 , tCK = tCK
(min)
Auto Refresh Current
Self Refresh Current
IDD5
IDD6
tRC tRFC(min)
CKE 0.2V
Operation Current
(4 bank interleaving)
IDD7
Burst Length = 4, tRC = tRC (min),
IOUT = 0mA
Note 1. Enable on-chip refresh and address counters.
Version
-5
-6
150
130
160
140
40
40
100
100
50
40
110
100
220
200
220
200
250
220
5
5
280
260
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA 1
mA
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Symbol
Min
Max
Unit
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Different Voltage, CLK and CLK inputs
VIH(AC) VREF + 0.31
V
VIL(AC)
VREF - 0.31
V
VID(AC)
0.7
VDDQ+0.6
V
Input Crossing Point Voltage, CLK and CLK inputs
VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
Note
1
2
Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(VDD = 2.3V~2.7V, VDDQ=2.3V~2.7V, TA = 25 °C , f = 1MHz)
Parameter
Input capacitance
(A0~A11, BA0~BA1, CKE, CS , RAS , CAS , WE )
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
Symbol
CIN1
CIN2
COUT
CIN3
Min
Max
Unit
2.5
3.5
pF
2.5
3.5
pF
4.0
5.5
pF
4.0
5.5
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2009
Revision : 1.0
5/49
 

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