M12L16161A-7TIG View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.
Part Name
Description
Manufacturer
M12L16161A-7TIG Datasheet PDF : 29 Pages
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ESMT
M12L16161A
Operation temperature condition -40℃~85℃
DQ0 ~ 15
VDD/VSS
VDDQ/VSSQ
N.C/RFU
Data Input / Output
Power Supply/Ground
Data Output Power/Ground
No Connection/
Reserved for Future Use
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN,VOUT
VDD,VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ + 150
0.7
50
Unit
V
V
°C
W
MA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA=-40 to 85 °C )
Parameter
Symbol
Min
Typ
Supply voltage
VDD,VDDQ
3.0
3.3
Input logic high voltage
VIH
2.0
3.0
Input logic low voltage
VIL
-0.3
0
Output logic high voltage
VOH
2.4
-
Output logic low voltage
VOL
-
-
Input leakage current
IIL
-5
-
Output leakage current
IOL
-5
-
Note : 1.VIH (max) = 4.6V AC for pulse width ≤ 10ns acceptable.
2.VIL (min) = -1.5V AC for pulse width ≤ 10ns acceptable.
3.Any input 0V ≤ VIN ≤ VDD+ 0.3V, all other pins are not under test = 0V.
4.Dout is disabled, 0V ≤ VOUT ≤ VDD.
Max
3.6
VDD+0.3
0.8
-
0.4
5
5
Unit
V
V
V
V
V
uA
uA
Note
1
2
IOH =-2mA
IOL = 2mA
3
4
CAPACITANCE (VDD = 3.3V, TA = 25 °C , f = 1MHz)
Pin
Symbol
Min
CLOCK
CCLK
2.5
RAS , CAS , WE , CS , CKE, LDQM,
UDQM
CIN
2.5
ADDRESS
CADD
2.5
DQ0 ~DQ15
COUT
4.0
Max
4.0
5.0
5.0
6.5
Unit
pF
pF
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 1.1
3/29
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