M12L128168A View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.

Part Name

Description

Manufacturer

M12L128168A

2M x 16 Bit x 4 Banks Synchronous DRAM

[Elite Semiconductor Memory Technology Inc. 

ESMT

M12L128168A

Operation temperature condition -40°C ~85°C

DC CHARACTERISTICS

Recommended operating condition unless otherwise noted，TA = -40 to 85 °C

Parameter

Symbol

Test Condition

CAS

Latency

Operating Current

(One Bank Active)

Precharge Standby Current

in power-down mode

Precharge Standby Current

in non power-down mode

Active Standby Current

in power-down mode

Active Standby Current

in non power-down mode

(One Bank Active)

Operating Current

(Burst Mode)

Refresh Current

Self Refresh Current

ICC1

ICC2P

ICC2PS

ICC2N

ICC2NS

ICC3P

ICC3PS

ICC3N

ICC3NS

ICC4

ICC5

ICC6

Burst Length = 1, tRC ≥ tRC(min), IOL = 0 mA

CKE ≤ VIL(max), tcc = tCK(MIN)

CKE & CLK ≤ VIL (max), tCC = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = tCK(MIN)

Input signals are changed one time during 2tck

CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞

input signals are stable

CKE ≤ VIL(max), tCC = tCK(MIN)

CKE & CLK ≤ VIL(max), tCC = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns

Input signals are changed one time during 2clks

All other pins ≥ VDD-0.2V or ≤ 0.2V

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

input signals are stable

IOL = 0 mA, Page Burst, 2 Banks activated

tRC ≥ tRC(min)

CKE ≤ 0.2V

Note : 1. Measured with outputs open.

2. Input signals are changed one time during 2 CLKS.

Version

-5 -6 -7

Unit Note

170 160 140 mA 1,2

2

mA

2

45

mA

25

6

mA

6

55

mA

35

mA

280 210 180 mA 1,2

280 210 180 mA

2

mA

Elite Semiconductor Memory Technology Inc.

Publication Date: Oct. 2007

Revision: 1.2

4/43

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