LT1167AIS8 View Datasheet(PDF) - Linear Technology
Part Name
Description
Manufacturer
LT1167AIS8 Datasheet PDF : 20 Pages
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LT1167
ELECTRICAL CHARACTERISTICS
The q denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VS = ±15V, VCM = 0V, – 40°C ≤ TA ≤ 85°C, RL = 2k, unless otherwise noted. (Note 4)
SYMBOL PARAMETER
CONDITIONS (Note 7)
LT1167AI
MIN TYP MAX
LT1167I
MIN TYP MAX UNITS
Gain Error
G=1
q
0.014 0.04
G = 10 (Note 2)
q
0.130 0.40
G = 100 (Note 2)
q
0.140 0.40
G = 1000 (Note 2)
q
0.160 0.40
0.015 0.05
%
0.140 0.42
%
0.150 0.42
%
0.180 0.45
%
GN
Gain Nonlinearity (Notes 2, 4)
G/T
Gain vs Temperature
VO = ±10V, G = 1
q
VO = ±10V, G = 10 and 100 q
VO = ±10V, G = 1000
q
G < 1000 (Note 2)
q
2
15
5
20
26 70
20 50
3
20
ppm
6
30
ppm
30 100
ppm
20 50 ppm/°C
VOST
VOSI
VOSIH
VOSO
VOSOH
VOSI / T
VOSO/ T
IOS
IOS/T
IB
IB/T
VCM
CMRR
Total Input Referred Offset Voltage
Input Offset Voltage
Input Offset Voltage Hysteresis
Output Offset Voltage
Output Offset Voltage Hysteresis
Input Offset Drift (Note 8)
Output Offset Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Bias Current Drift
Input Voltage Range
Common Mode Rejection Ratio
VOST = VOSI + VOSO/G
(Notes 3, 6)
(Notes 3, 6)
(Note 3)
(Note 3)
VS = ±2.3V to ±5V
VS = ±5V to ±18V
1k Source Imbalance,
VCM = 0V to ±10V
G=1
G = 10
G = 100
G = 1000
q
20 75
25 100
µV
3.0
3.0
µV
q
180 500
200 600
µV
30
30
µV
q
0.05 0.3
0.06 0.4
µV/°C
q
0.8 5
1
6
µV/°C
q
110 550
120 700
pA
q
0.3
0.3
pA/°C
q
180 600
220 800
pA
q
0.5
0.6
pA/°C
q – VS + 2.1
+ VS – 1.3 – VS + 2.1
+VS – 1.3
V
q – VS + 2.1
+ VS – 1.4 – VS + 2.1
+ VS – 1.4
V
q
86 90
81 90
dB
q
98 105
95 105
dB
q 114 118
112 118
dB
q 116 133
112 133
dB
PSRR Power Supply Rejection Ratio
VS = ±2.3V to ±18V
G=1
q 100 112
95 112
dB
G = 10
q 120 125
115 125
dB
G = 100
q 125 132
120 132
dB
G = 1000
q 128 140
125 140
dB
IS
Supply Current
VOUT
Output Voltage Swing
IOUT
Output Current
SR
Slew Rate
VREF
REF Voltage Range
VS = ±2.3V to ±5V
VS = ±5V to ±18V
G = 1, VOUT = ±10V
(Note 3)
q
1.1 1.6
1.1 1.6
mA
q – VS + 1.4
+ VS – 1.3 – VS + 1.4
+ VS – 1.3
V
q – VS + 1.6
+ VS – 1.5 – VS + 1.6
+ VS – 1.5
V
q
15 20
15 20
mA
q 0.55 0.95
0.55 0.95
V/µs
q – VS + 1.6
+ VS – 1.6 – VS + 1.6
+ VS – 1.6
V
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be imparied.
Note 2: Does not include the effect of the external gain resistor RG.
Note 3: This parameter is not 100% tested.
Note 4: The LT1167AC/LT1167C are designed, characterized and expected
to meet the industrial temperature limits, but are not tested at – 40°C and
85°C. I-grade parts are guaranteed.
Note 5: This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
Note 6: Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25°C, but
the IC is cycled to 85°C I-grade (or 70°C C-grade) or – 40°C I-grade
(0°C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
Note 7: Typical parameters are defined as the 60% of the yield parameter
distribution.
Note 8: Referred to input.
5
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