KTD1304 View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
Manufacturer
KTD1304 Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTD1304
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
25
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
12
V
Collector cut-off current
ICBO
VCB=25V,IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=12V,IC=0
DC current gain
hFE
VCE=2V,IC=4mA
200
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA
0.1 μA
800
0.25 V
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VBE(sat)
fT
Cob
IC=100mA, IB=10mA
VCE=10V, IC= 1mA
60
VCB=10V,IE=0,f=1MHz
1
V
MHz
10 pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC113
Rev.A
www.galaxycn.com
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