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3N250-M4/51(2015) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
3N250-M4/51
(Rev.:2015)
Vishay
Vishay Semiconductors Vishay
3N250-M4/51 Datasheet PDF : 4 Pages
1 2 3 4
www.vishay.com
KBPxxM-M4, 3N2xx-M4
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
KBP005M KBP01M KBP02M KBP04M
3N246
3N247 3N248 3N249
KBP06M
3N250
KBP08M
3N251
KBP10M
UNIT
3N252
Typical thermal resistance (1)
RJA
RJL
40
°C/W
13
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
KBP06M-M4/51
1.895
3N250-M4/51
1.895
PACKAGE CODE
51
51
BASE QUANTITY
600
600
DELIVERY MODE
Anti-static PVC tray
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.6
60 Hz Resistive or
1.4
Inductive Load
1.2
PCB Mounted on
1.0
0.47 x 0.47" (12 x 12 mm)
Copper Pads
0.8
0.6
0.4
0.2
0
20
Capacitive Load
Ipk
IAV
=
5.0
10
20
(per leg)
40
60
80 100 120
Ambient Temperature (°C)
140 150
Fig. 1 - Derating Curve Output Rectified Current
100
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
60
Single Half Sine-Wave
50
40
30
TJ = 150 °C
20
TA = 25 °C
10
1.0 Cycle
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
10
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
0
TJ = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 05-Aug-15
2
Document Number: 89306
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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