IRLML2502PBF View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRLML2502PBF Datasheet PDF : 8 Pages
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PD - 94892D
IRLML2502PbF
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
G1
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
S2
l Lead-Free
l Halogen-Free
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3â„¢, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
HEXFET® Power MOSFET
VDSS = 20V
3D
RDS(on) = 0.045Ω
Micro3â„¢
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current Â
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
4.2
3.4
33
1.25
0.8
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambientƒ
www.irf.com
Typ.
75
Max.
100
Units
°C/W
1
09/25/12
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