IRL3803
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 โโโ โโโ V VGS = 0V, ID = 250ยตA
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient โโโ 0.052 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
โโโ โโโ 0.006 โฆ VGS = 10V, ID = 71A ย
โโโ โโโ 0.009
VGS = 4.5V, ID = 59A ย
VGS(th)
Gate Threshold Voltage
1.0 โโโ โโโ V VDS = VGS, ID = 250ยตA
gfs
Forward Transconductance
55 โโโ โโโ S VDS = 25V, ID = 71A
IDSS
Drain-to-Source Leakage Current
โโโ โโโ 25 ยตA VDS = 30V, VGS = 0V
โโโ โโโ 250
VDS = 24V, VGS = 0V, TJ = 150ยฐC
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
โโโ โโโ 100 nA VGS = 16V
โโโ โโโ -100
VGS = -16V
Qg
Total Gate Charge
โโโ โโโ 140
ID = 71A
Qgs
Gate-to-Source Charge
โโโ โโโ 41 nC VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
โโโ โโโ 78
VGS = 4.5V, See Fig. 6 and 13 ย
td(on)
Turn-On Delay Time
โโโ 14 โโโ
VDD = 15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
โโโ 230 โโโ
โโโ 29 โโโ
ns
ID = 71A
RG = 1.3โฆ, VGS = 4.5V
โโโ 35 โโโ
RD = 0.20โฆ, See Fig. 10 ย
LD
Internal Drain Inductance
LS
Internal Source Inductance
โโโ 4.5 โโโ
โโโ 7.5 โโโ
Between lead,
6mm (0.25in.)
nH from package
and center of die contact
D
G
S
Ciss
Input Capacitance
โโโ 5000 โโโ
VGS = 0V
Coss
Output Capacitance
โโโ 1800 โโโ pF VDS = 25V
Crss
Reverse Transfer Capacitance
โโโ 880 โโโ
ฦ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
โโโ โโโ 140ย
A showing the
โโโ โโโ 470
integral reverse
p-n junction diode.
D
G
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 71A, VGS = 0V ย
โโโ 120 180 ns TJ = 25ยฐC, IF = 71A
โโโ 450 680 nC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ย VDD = 15V, starting TJ = 25ยฐC, L = 180ยตH
RG = 25โฆ, IAS = 71A. (See Figure 12)
ย ISD โค 71A, di/dt โค 130A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
ย Pulse width โค 300ยตs; duty cycle โค 2%.
ย
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
2/8
www.freescale.net.cn