IRL3713LPBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRL3713LPBF

HEXFET® Power MOSFET

International Rectifier 

IRL3713/S/LPbF

Static @ TJ = 25°C (unless otherwise specified)

Symbol

V(BR)DSS

∆V(BR)DSS/∆TJ

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Min Typ

30 –––

––– 0.027

RDS(on)

Static Drain-to-Source On-Resistance

––– 2.6

––– 3.3

VGS(th)

Gate Threshold Voltage

1.0 –––

––– –––

IDSS

Drain-to-Source Leakage Current

––– –––

––– –––

Gate-to-Source Forward Leakage

––– –––

IGSS

Gate-to-Source Reverse Leakage

––– –––

Max

–––

–––

3.0

4.0

2.5

50

20

100

200

-200

Units

Conditions

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 38A

e VGS = 4.5V, ID = 30A

V VDS = VGS, ID = 250µA

VDS = 30V, VGS = 0V

µA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

nA VGS = 20V

VGS = -20V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min Typ Max Units

Conditions

gfs

Qg

Qgs

Qgd

QOSS

RG

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Gate Resistance

76 ––– ––– S VDS = 15V, ID = 30A

––– 75 110

ID = 30A

–––

–––

24

37

–––

–––

f nC VDS = 15V

VGS = 4.5V

61 92

VGS = 0V, VDS = 15V

0.5 ––– 3.4 Ω

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

––– 16 –––

––– 160 –––

––– 40 –––

––– 57 –––

––– 5890 –––

––– 3130 –––

––– 630 –––

VDD = 15V

ns ID = 30A

e RG = 1.8Ω

VGS = 4.5V

VGS = 0V

pF VDS = 15V

ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

Typ

Max

Units

–––

1530

mJ

–––

46

A

Diode Characteristics

Symbol

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ùh (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min Typ Max Units

Conditions

h ––– ––– 260

A MOSFET symbol

showing the

h ––– ––– 1040

integral reverse

––– 0.80 1.3

––– 0.68 –––

V

p-n junction diode.

e TJ = 25°C, IS = 30A, VGS = 0V

e TJ = 125°C, IS = 30A, VGS = 0V

–––

–––

75

140

110

210

e ns TJ = 25°C, IF = 30A, VR = 0V

nC di/dt = 100A/µs

–––

–––

78

160

120

240

e ns TJ = 125°C, IF = 30A, VR = 20V

nC di/dt = 100A/µs

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