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IRFP460 View Datasheet(PDF) - Intersil

Part Name
Description
Manufacturer
IRFP460 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFP460
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
D
-
-
20
A
-
-
80
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
S
VSD
TJ = 25oC, ISD = 21A, VGS = 0V (Figure 13)
-
-
1.8
V
trr
TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs
280
580 1200
ns
QRR
TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs
3.8
8.1
18
µC
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.3mH, RGS = 25, Peak IAS = 20A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
16
12
8
4
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.1 0.2
0.1
0.05
10-2
0.02
0.01
SINGLE PULSE
10-3
10-5
10-4
PDM
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-361
 

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