IRFP23N50L View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
IRFP23N50L Datasheet PDF : 8 Pages
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IRFP23N50L, SiHFP23N50L
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 11a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 11b - Switching Time Waveforms
10
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D =
t1 / t2
2. PeakT J = P DM x Z thJC + T C
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
5.0
4.5
4.0
3.5
ID = 250 µA
3.0
2.5
2.0
1.5
1.0
- 75 - 50 - 25 0
25 50 75 100 125 150
TJ, Temperature (°C)
Fig. 13 - Threshold Voltage vs. Temperature
750
ID
TOP
10A
15A
600
BOTTOM 23A
450
300
150
0
25
50
75
100
125
Starting T , Junction Temperature
150
(°C)
Fig. 14 - Maximum Avalanche Energy s. Drain Current
Document Number: 91209
S-81352-Rev. A, 16-Jun-08
www.vishay.com
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