IRF2804L View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
IRF2804L Datasheet PDF : 12 Pages
| |||
IRF2804
IRF2804S/L
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 2.0mى
G
S
ID = 75A
TO-220AB
IRF2804
D2Pak
IRF2804S
TO-262
IRF2804L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
c Pulsed Drain Current
Maximum Power Dissipation
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
Max.
280
200
75
1080
330
2.2
± 20
670
1160
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1 / 12
www.freescale.net.cn
|
|
Share Link: 