IRF1404ZSPBF View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRF1404ZSPBF Datasheet PDF : 12 Pages
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AUTOMOTIVE MOSFET
PD - 96040
IRF1404ZPbF
IRF1404ZSPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
IRF1404ZLPbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 3.7mΩ
G
ID = 75A
S
TO-220AB
D2Pak
TO-262
IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
180
120
75
710
200
Units
A
W
Linear Derating Factor
VGS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
h EAS (Tested ) Single Pulse Avalanche Energy Tested Value
à IAR
Avalanche Current
g EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
1.3
± 20
330
480
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
www.irf.com
Typ.
–––
0.50
–––
–––
k Max.
0.75
–––
62
40
Units
°C/W
1
01/03/06
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