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F1010E View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
F1010E
IR
International Rectifier IR
F1010E Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF1010E
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โˆ†V(BR)DSS/โˆ†TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energyย‚
Min. Typ. Max. Units
Conditions
60 โ€“โ€“โ€“ โ€“โ€“โ€“ V VGS = 0V, ID = 250ยตA
โ€“โ€“โ€“ 0.064 โ€“โ€“โ€“ V/ยฐC Reference to 25ยฐC, ID = 1mA
โ€“โ€“โ€“ โ€“โ€“โ€“ 12 mโ„ฆ VGS = 10V, ID = 50A ย„
2.0 โ€“โ€“โ€“ 4.0 V VDS = VGS, ID = 250ยตA
69 โ€“โ€“โ€“ โ€“โ€“โ€“ S VDS = 25V, ID = 50Aย„
โ€“โ€“โ€“ โ€“โ€“โ€“ 25 ยตA VDS = 60V, VGS = 0V
โ€“โ€“โ€“ โ€“โ€“โ€“ 250
VDS = 48V, VGS = 0V, TJ = 150ยฐC
โ€“โ€“โ€“ โ€“โ€“โ€“ 100 nA VGS = 20V
โ€“โ€“โ€“ โ€“โ€“โ€“ -100
VGS = -20V
โ€“โ€“โ€“ โ€“โ€“โ€“ 130
ID = 50A
โ€“โ€“โ€“ โ€“โ€“โ€“ 28 nC VDS = 48V
โ€“โ€“โ€“ โ€“โ€“โ€“ 44
VGS = 10V, See Fig. 6 and 13
โ€“โ€“โ€“ 12 โ€“โ€“โ€“
VDD = 30V
โ€“โ€“โ€“ 78 โ€“โ€“โ€“ ns ID = 50A
โ€“โ€“โ€“ 48 โ€“โ€“โ€“
RG = 3.6โ„ฆ
โ€“โ€“โ€“ 53 โ€“โ€“โ€“
VGS = 10V, See Fig. 10 ย„
Between lead,
D
โ€“โ€“โ€“ 4.5 โ€“โ€“โ€“
6mm (0.25in.)
nH
from package
G
โ€“โ€“โ€“ 7.5 โ€“โ€“โ€“
and center of die contact
S
โ€“โ€“โ€“ 3210 โ€“โ€“โ€“
VGS = 0V
โ€“โ€“โ€“ 690 โ€“โ€“โ€“
VDS = 25V
โ€“โ€“โ€“ 140 โ€“โ€“โ€“ pF ฦ’ = 1.0MHz, See Fig. 5
โ€“โ€“โ€“ 1180ย…320ย† mJ IAS = 50A, L = 260ยตH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โ€“โ€“โ€“ โ€“โ€“โ€“ 84ย‡ A showing the
integral reverse
G
โ€“โ€“โ€“ โ€“โ€“โ€“ 330
p-n junction diode.
S
โ€“โ€“โ€“ โ€“โ€“โ€“ 1.3 V TJ = 25ยฐC, IS = 50A, VGS = 0V ย„
โ€“โ€“โ€“ 73 110 ns TJ = 25ยฐC, IF = 50A
โ€“โ€“โ€“ 220 330 nC di/dt = 100A/ยตs ย„
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ย‚ Starting TJ = 25ยฐC, L = 260ยตH
RG = 25โ„ฆ, IAS = 50A, VGS =10V (See
ยƒFigIuSrDeโ‰ค1520) A, di/dt โ‰ค 230A/ยตs, VDD โ‰ค V(BR)DSS,
TJ โ‰ค 175ยฐC
ย„ Pulse width โ‰ค 400ยตs; duty cycle โ‰ค 2%.
ย… This is a typical value at device destruction and represents
operation outside rated limits.
ย† This is a calculated value limited to TJ = 175ยฐC .
ย‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
2
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