IRF1404
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance ย
Min. Typ. Max.
40 โโโ โโโ
โโโ 0.039 โโโ
โโโ 0.0035 0.004
2.0 โโโ 4.0
76 โโโ โโโ
โโโ โโโ 20
โโโ โโโ 250
โโโ โโโ 200
โโโ โโโ -200
โโโ 131 196
โโโ 36 โโโ
โโโ 37 56
โโโ 17 โโโ
โโโ 190 โโโ
โโโ 46 โโโ
โโโ 33 โโโ
โโโ 4.5 โโโ
โโโ 7.5 โโโ
โโโ 5669 โโโ
โโโ 1659 โโโ
โโโ 223 โโโ
โโโ 6205 โโโ
โโโ 1467 โโโ
โโโ 2249 โโโ
Units
V
V/ยฐC
โฆ
V
S
ยตA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA
VGS = 10V, ID = 121A ย
VDS = 10V, ID = 250ยตA
VDS = 25V, ID = 121A
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150ยฐC
VGS = 20V
VGS = -20V
ID = 121A
VDS = 32V
VGS = 10Vย
VDD = 20V
ID = 121A
RG = 2.5โฆ
RD = 0.2โฆ ย
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ฦ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
VGS = 0V, VDS = 32V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ย Starting TJ = 25ยฐC, L = 85ยตH
RG = 25โฆ, IAS = 121A. (See Figure 12)
ย ISD โค 121A, di/dt โค 130A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 202ย
A
showing the
integral reverse
G
โโโ โโโ 808
p-n junction diode.
S
โโโ โโโ 1.5 V TJ = 25ยฐC, IS = 121A, VGS = 0V ย
โโโ 78 117 ns TJ = 25ยฐC, IF = 121A
โโโ 163 245 nC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ย Pulse width โค 400ยตs; duty cycle โค 2%.
ย
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ย Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
2/9
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